frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure (nf) output power for 1 db compression (p1db) output third order intercept point (oip3) drain bias voltage (v5) supply current (id) electrical characteristics (ambient temperature t = 25 o c) parameter units ghz db db db db db db dbm dbm vdc ma min. 20.0 8.0 15.0 18.0 - 40.0 - - - - - typ. - 10.0 18.0 23.0 +/-1.5 45.0 2.6 +4.0 +16.0 +5.0 85 max. 36.0 - - - - - 4.0 - - +5.5 95 mimix broadbands three stage balanced 20.0-36.0 ghz gaas mmic low noise amplifier has a small signal gain of 23.0 db with a noise figure of 2.6 db across the band. this mmic uses mimix broadbands gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. 20.0-36.0 ghz gaas mmic low noise amplifier absolute maximum ratings page 1 of 9 general description supply voltage (vd) supply current (id) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) 1 +6.0 vdc 120 ma +15.0 dbm -65 to +165 oc -55 to +85 oc +175 oc (1) channel temperature affects a device's mtbf. it is recommended to keep channel temperature as low as possible for maximum life. (2) see plots for additional information. (3) unless otherwise indicated min/max over 20.0-36.0 ghz and biased at vd=5v, id=85ma. 3 features balanced design excellent input/output match self-biased architecture 23.0 db small signal gain 2.6 db noise figure 100% on-wafer rf, dc and noise figure testing 100% visual inspection to mil-std-883 method 2010 chip device layout mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 l1002-bd 3 3 3 3 2 2
20.0-36.0 ghz gaas mmic low noise amplifier page 2 of 9 low noise amplifier measurements (on-water 1 ) l1002-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 note [1] measurements C on-wafer data has been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. for optimum performance mimix t-pad transition is recommended. for additional information see the mimix t-pad transition application note. xl1002-bd vd=5.0 v, id=83 ma 2 4 2 5 2 6 2 7 2 8 1 8 1 9 2 0 2 1 2 2 2 3 20 . 0 22 . 0 24 . 0 26 . 0 28 . 0 30 . 0 32 . 0 3 4 . 0 36 . 0 gain (db) frequency (ghz) xl1002-bd vd=5.0 v, id=83 ma - 1 0 0 1 0 2 0 3 0 4 0 - 8 0 - 7 0 - 6 0 - 5 0 - 4 0 - 3 0 - 2 0 - 1 0 14 . 0 18 . 0 22 . 0 26 . 0 3 0 . 0 34 . 0 3 8 . 0 42 . 0 4 6 . 0 50 . 0 gain & reverse isolation (db) frequency (ghz) xl1002-bd vd=5.0 v, id=83 ma - 1 5 - 1 0 - 5 0 - 3 5 - 3 0 - 2 5 - 2 0 20 . 0 2 2 . 0 24 . 0 26 . 0 28 . 0 30 . 0 32 . 0 3 4 . 0 36 . 0 frequency (ghz) input return loss (db) xl1002-bd vd=5.0 v, id=83 ma - 2 0 - 1 5 - 1 0 - 5 0 - 4 5 - 4 0 - 3 5 - 3 0 - 2 5 14 . 0 18 . 0 22 . 0 26 . 0 30 . 0 34 . 0 38 . 0 4 2 . 0 46 . 0 50 . 0 frequency (ghz) input return loss (db) xl1002-bd vd=5.0 v, id=83 ma - 1 5 - 1 0 - 5 0 - 3 0 - 2 5 - 2 0 20 . 0 22 . 0 24 . 0 26 . 0 28 . 0 30 . 0 32 . 0 34 . 0 36 . 0 frequency (ghz) output return loss (db) xl1002-bd vd=5.0 v, id=83 ma - 3 0 - 2 5 - 2 0 - 1 5 - 1 0 - 5 0 - 6 0 - 5 5 - 5 0 - 4 5 - 4 0 - 3 5 14 . 0 18 . 0 22 . 0 26 . 0 3 0 . 0 34 . 0 3 8 . 0 42 . 0 4 6 . 0 50 . 0 frequency (ghz) output return loss (db)
20.0-36.0 ghz gaas mmic low noise amplifier page 3 of 9 low noise amplifier measurements (on-water 1 ) (cont.) l1002-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 note [1] measurements C on-wafer data has been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. for optimum performance mimix t-pad transition is recommended. for additional information see the mimix t-pad transition application note. xl1002-bd, v5=5.0 v, id= 85 ma (~300 devices) 2 3 2 4 2 5 2 6 2 7 2 8 1 8 1 9 2 0 2 1 2 2 2 3 2 0 . 0 2 1 . 0 2 2 . 0 2 3 . 0 2 4 . 0 2 5 . 0 26 . 0 2 7 . 0 28 . 0 29 . 0 30 . 0 31 . 0 32 . 0 33 . 0 34 . 0 35 . 0 36 . 0 frequency (ghz) gain (db) m a x m e d i a n m ea n m i n xl1002-bd, v5=5.0 v, id= 85 ma (~300 devices) - 4 0 - 3 0 - 2 0 - 1 0 0 - 9 0 - 8 0 - 7 0 - 6 0 - 5 0 2 0 . 0 21 . 0 22 . 0 2 3 . 0 24 . 0 25 . 0 2 6 . 0 2 7 . 0 28 . 0 2 9 . 0 3 0 . 0 31 . 0 3 2 . 0 3 3 . 0 3 4 . 0 35 . 0 3 6 . 0 frequency (ghz) reverse isolation (db) m a x m e d i a n m ea n - 3 s i g m a xl1002-bd, v5=5.0 v, id= 85 ma (~300 devices) - 3 0 - 2 5 - 2 0 - 1 5 - 1 0 - 5 0 - 6 0 - 5 5 - 5 0 - 4 5 - 4 0 - 3 5 2 0 . 0 2 1 . 0 22 . 0 2 3 . 0 2 4 . 0 2 5 . 0 26 . 0 2 7 . 0 2 8 . 0 2 9 . 0 30 . 0 31 . 0 3 2 . 0 3 3 . 0 34 . 0 35 . 0 36 . 0 frequency (ghz) input return loss (db) m a x m e d i a n m ea n - 3 s i g m a xl1002-bd, v5=5.0 v, id= 85 ma (~300 devices) 3 0 -2 5 -2 0 -1 5 -1 0 - 5 0 -5 5 -5 0 -4 5 -4 0 -3 5 - 3 0 2 0 . 0 2 1 . 0 2 2 . 0 2 3 . 0 2 4 . 0 2 5 . 0 2 6 . 0 2 7 . 0 2 8 . 0 2 9 . 0 3 0 . 0 3 1 . 0 3 2 . 0 3 3 . 0 3 4 . 0 35 . 0 3 6 . 0 frequency (ghz) output return loss (db) m a x m ed i a n m e a n - 3 s i g m a xl1002-bd, v5=5.0 v, id= 85 ma, (~110 devices) 8 1 0 1 2 1 4 1 6 1 8 0 2 4 6 1 8 . 0 20 . 0 2 2 . 0 2 4 . 0 2 6 . 0 2 8 . 0 3 0 . 0 3 2 . 0 3 4 . 0 3 6 . 0 3 8 . 0 frequency (ghz) output power psat (dbm) m a x m e d i a n m e a n - 3 s i g m a xl1002-bd, v5=5.0 v, id= 85 ma (~300 devices) 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 0 . 0 0 . 5 1 . 0 1 . 5 20 . 0 22 . 0 2 4 . 0 26 . 0 28 . 0 30 . 0 32 . 0 3 4 . 0 3 6 . 0 frequency (ghz) noise figure (db) m a x m ed i a n m ea n m i n
20.0-36.0 ghz gaas mmic low noise amplifier page 4 of 9 low noise amplifier measurements (on-wafer 1 ) (cont.) l1002-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 note [1] measurements C on-wafer data has been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. for optimum performance mimix t-pad transition is recommended. for additional information see the mimix t-pad transition application note. xl1002-bd, v5=5.0 v, id= 85 ma (~110 devices) 1 2 1 4 1 6 2 4 6 8 1 0 output power p1db (dbm) - 2 0 2 1 8 . 0 20 . 0 22 . 0 24 . 0 26 . 0 28 . 0 30 . 0 3 2 . 0 34 . 0 3 6 . 0 3 8 . 0 frequency (ghz) m a x m ed i a n m ea n - 3 s i g m a xl1002-bd, v5=5.0 v, id=85 ma, pout=-9 dbm/tone 1 6 1 8 2 0 8 1 0 1 2 1 4 4 6 2 0 2 2 2 4 2 6 2 8 3 0 3 2 3 4 3 6 frequency (ghz) output third order intercept (dbm)
20.0-36.0 ghz gaas mmic low noise amplifier page 5 of 9 s-parameters (on-wafer 1 ) l1002-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 note [1] s-parameters C on-wafer s-parameters have been taken using bias conditions as shown. measurements are referenced 150 um in from rf in/out pad edge. t y p c i a l s - p arame t er da t a f or x l 1002 - b d vd = 5 .0 v, id = 83 m a f re qu e n c y s 1 1 s1 1 s 2 1 s2 1 s 1 2 s1 2 s 2 2 s2 2 (g h z ) ( m a g ) ( a ng ) ( m a g ) ( a ng ) ( m a g ) ( a ng ) ( m a g ) ( a ng ) 15. 0 0 .56 4 - 1 78.0 6 1.18 8 - 0 .8 5 0 .002 0 147.4 9 0.18 4 68.2 9 16. 0 0 .52 5 1 6 3.9 9 2.31 4 - 58.8 7 0.002 2 133.7 1 0.11 2 49.2 7 17. 0 0 .45 6 1 4 0.6 6 3.62 6 - 100.0 8 0.002 0 112.5 4 0.03 8 32.3 4 18. 0 0 .31 6 1 0 9.4 1 5.98 6 - 139.8 1 0.001 3 85.1 9 0.02 9 178.1 8 19. 0 0 .05 6 5 9 .7 4 9 .88 5 168.1 4 0.001 2 85.7 2 0.07 5 168.5 7 20. 0 0 .09 3 1 6 3.7 6 12.91 8 114.8 4 0.001 0 144.4 4 0.09 0 146.4 6 21. 0 0 .05 8 - 1 56.5 9 14.49 1 66.3 9 0.001 8 140.5 8 0.09 3 144.9 9 2 2 0 0 16 0 - 1 4 3 7 0 1 5 11 2 2 5 3 2 0 002 9 12 5 6 9 0 09 6 14 0 8 6 2 2 . 0 0 . 16 0 1 4 3 . 7 0 1 5 . 11 2 2 5 . 3 2 0 . 002 9 12 5 . 6 9 0 . 09 6 14 0 . 8 6 23. 0 0 .24 2 - 1 62.3 1 15.49 9 - 11.8 9 0.003 1 110.2 7 0.08 5 134.0 1 24. 0 0 .28 1 1 7 6.3 8 15.24 8 - 47.7 7 0.002 9 97.4 6 0.07 7 139.0 2 25. 0 0 .29 9 1 5 9.5 2 14.60 3 - 80.3 8 0.003 1 65.7 0 0.08 7 143.9 2 26. 0 0 .29 8 1 4 5.3 1 13.98 2 - 109.2 7 0.002 2 45.8 7 0.08 3 150.1 7 27. 0 0 .30 0 1 3 0.9 9 13.41 4 - 136.0 6 0.001 6 16.8 5 0.09 9 152.1 3 28. 0 0 .31 0 1 1 3.9 4 13.03 7 - 161.2 7 0.000 2 111.3 4 0.12 3 143.9 2 29. 0 0 .30 0 9 6 .7 8 13.15 9 175.0 5 0.001 1 - 5 .1 6 0 .12 7 139.8 0 3 0 0 0 28 8 7 5 5 2 1 3 71 7 15 1 9 3 0 001 7 10 0 5 0 0 13 4 13 1 2 3 3 0 . 0 0 . 28 8 7 5 . 5 2 1 3 . 71 7 15 1 . 9 3 0 . 001 7 - 10 0 . 5 0 0 . 13 4 13 1 . 2 3 31. 0 0 .26 4 4 5 .9 2 15.04 6 125.0 4 0.003 3 - 129.9 5 0.13 6 119.9 9 32. 0 0.24 3 6.2 8 16.97 0 98.0 7 0.005 8 - 173.1 0 0.12 4 108.2 5 33. 0 0 .18 6 - 5 8.0 3 19.55 5 65.6 3 0.008 2 171.6 1 0.09 2 112.4 8 34. 0 0 .18 2 - 1 53.9 7 20.28 6 27.2 9 0.010 8 152.3 2 0.12 2 125.5 8 35. 0 0 .22 9 1 2 8.7 6 18.66 4 - 8 .4 2 0 .012 5 130.8 1 0.16 7 108.6 7 36. 0 0 .24 8 7 2 .5 6 16.85 8 - 42.3 2 0.013 7 103.8 3 0.18 5 84.4 8 37. 0 0 .22 3 2 4 .5 6 14.95 7 - 75.9 9 0.014 9 74.0 5 0.17 3 55.6 6 38. 0 0 .15 1 - 1 3.7 6 12.47 1 - 110.6 6 0.013 8 60.1 4 0.12 0 31.7 4 39. 0 0 .10 3 - 5 4.5 0 9.78 1 - 143.0 5 0.012 0 35.1 1 0.07 0 10.0 4 40. 0 0 .05 5 - 1 03.8 9 7.30 6 - 171.6 8 0.007 3 5.5 3 0.03 1 15.5 1 41. 0 0 .03 9 - 1 31.6 4 5.48 2 161.7 7 0.007 2 16.9 5 0.02 4 65.2 0 42. 0 0 .03 9 1 6 5.2 9 3.98 7 137.9 6 0.005 1 - 9 .9 3 0 .03 3 89.3 1 43. 0 0 .05 1 1 3 8.9 7 2.90 3 116.9 3 0.004 2 49.7 1 0.03 6 80.1 1 44. 0 0 .06 7 1 1 8.5 5 2.03 6 95.4 8 0.000 5 - 39.5 2 0.05 4 72.2 6 4 5 0 0 08 2 1 0 8 6 7 1 52 7 7 5 6 1 0 002 4 4 7 4 8 0 05 4 5 9 1 2 4 5 . 0 0 . 08 2 1 0 8 . 6 7 1 . 52 7 7 5 . 6 1 0 . 002 4 4 7 . 4 8 0 . 05 4 5 9 . 1 2
rf out v5* rf in v1* 1 2 3 4 5 6 7 8 9 10 1.384 (0.055) 1.184 (0.047) 0.983 (0.039) 0.785 (0.031) 1 2 3 4 5 1.950 (0.077) 0.983 (0.039) 0.658 (0.026) 1.288 (0.051) 0.0 0.0 6 7 8 1.184 (0.047) 0.785 (0.031) 9 10 1.384 (0.055) 2.350 (0.093) 20.0-36.0 ghz gaas mmic low noise amplifier page 6 of 9 mechanical drawing bias arrangement bypass capacitors - see app note [2] *v1 or v5 may be used, but both are not required. rf in rf out v5 l1002-bd xl1002-bd (note: engineering designator is 28ln3ba0050) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.115 +/- 0.010 (0.0045 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads are 0.100 x 0.100 (0.004 x 0.004). all rf bond pads are 0.100 x 0.200 (0.004 x 0.008) bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 2.838 mg. bond pad #1 (rf in) bond pad #2 (v1) bond pad #3 (v2) bond pad #4 (v3) bond pad #5 (v4) bond pad #6 (rf out) bond pad #7 (v8) bond pad #8 (v7) bond pad #9 (v6) bond pad #10 (v5) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10
20.0-36.0 ghz gaas mmic low noise amplifier page 7 of 9 l1002-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 app note [1] biasing - as shown in the bonding diagram, this device operates using a self-biased architecture and only requires a single bias voltage. all dc pads (v1 through v8) are tied together on-chip, even though v1 or v5 are shown as main connections, any of the eight dc pads may be used to bias the device. bias is nominally v1 or v5=5v, id=85 ma. app note [2] bias arrangement - the dc pad at the top (v1) should be connected to one dc bypass capacitor (~100-200 pf ) and the dc pad at the bottom (v5) should be connected using another dc bypass capacitor (~100-200 pf ). additional dc bypass capacitance (~0.01 pf ) is also recommended. capacitance should be as close to the device as possible.
mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 20.0-36.0 ghz gaas mmic low noise amplifier page 8 of 9 mttf graphs these numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/ finite element analysis done at mimix broadband. the values shown here are only to be used as a guideline against the end application requirements and only represent reliability information under one bias condition. ultimately bias conditions and resulting power dissipation along with the practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific application, see previous pages. if the data shown below does not meet your reliability requirements or if the bias conditions are not within your operating limits please contact technical sales for additional information. l1002-bd xl1002-bd vd=5.0 v, id=85 ma 1 . 0 e + 1 5 1 . 0 e + 0 9 1 . 0 e + 1 0 1 . 0 e + 1 1 1 . 0 e + 1 2 1 . 0 e + 1 3 1 . 0 e + 1 4 mttf (hours) 1 . 0 e + 0 7 1 . 0 e + 0 8 5 5 . 0 6 5 . 0 7 5 . 0 8 5 . 0 9 5 . 0 1 0 5 . 0 1 15 . 0 1 2 5 . 0 backplate temperature (deg c) xl1002-bd vd=5.0 v, id=85 ma 1 . 00 e + 0 2 1 . 00 e - 0 4 1 . 00 e - 0 3 1 . 00 e - 0 2 1 . 00 e - 0 1 1 . 00 e + 0 0 1 . 00 e + 0 1 fits 1 . 00 e - 0 6 1 . 00 e - 0 5 55 . 0 65 . 0 75 . 0 85 . 0 9 5 . 0 1 05 . 0 1 15 . 0 125 . 0 backplate temperature (deg c) xl1002-bd vd=5.0 v, id=85 ma 4 1 4 2 3 3 3 4 3 5 3 6 3 7 3 8 3 9 4 0 rth (deg c/w) 3 2 3 3 5 5 . 0 6 5 . 0 7 5 . 0 85 . 0 9 5 . 0 10 5 . 0 1 1 5 . 0 1 2 5 . 0 backplate temperature (deg c) xl1002-bd vd=5.0 v, id=85 ma 14 0 15 0 7 0 8 0 9 0 10 0 11 0 12 0 13 0 tch (deg c) 6 0 5 5 . 0 6 5 . 0 7 5 . 0 85 . 0 95 . 0 10 5 . 0 11 5 . 0 1 2 5 . 0 backplate temperature (deg c)
mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2010 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2010 - rev 09-jan-10 20.0-36.0 ghz gaas mmic low noise amplifier page 9 of 9 l1002-bd handling and assembly information ordering information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 oc (note: gold germanium should be avoided). the work station temperature should be 310 oc +/- 10 oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description xl1002-bd-000v rohs compliant die packed in vacuum release gel paks xl1002-bd-ev1 xl1002 die evaluation module c a u t i o n : e s d s e n s i t i v e appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device.
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